Silicon integrated circuits / 
edited by Dawon Kahng. 
 - New York :  Academic Press,  1981-1985. 
 - 0a18.1..1.28 p18.1..30.11  0194-2891 ; v20.1..1.1 .
<br/><br/> Supplement 2 parts A and B. 
<br/><br/>Includes bibliographies and indexes. 
<br/><br/>pt. A. Physics of the MOS transistor / John R. Brews. Nonvolatile memories / Yoshio Nishi and Hisakazu Iizuka. The properties of silicon-on-sapphire substrates, devices, and integrated circuits / Alfred C. Ipri -- pt. B. Physics and chemistry of impurity diffusion and oxidation of silicon / Richard B. Fair. Silicon power field controlled devices and integrated circuits / B. Jayant Baliga -- pt. C. Transient thermal processing of silicon / G.K. Celler and T.E. Seidel. Reactive ion-beam etching and plasma deposition techniques using electron cyclotron resonance plasmas / Seitaro Matsua. Physics of VLSI processing and process simulation / W. Fichtner. 
<br/><br/><label>ISBN: </label>0120029545 (v. 1) 
<br/><br/><label>LCCN: </label>81126148 //r85 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Metal oxide semiconductors.<br/>Semiconductor storage devices.<br/>Integrated circuits.
<br/><br/><label>LC Class. No.: </label>TK7871.99.M44  / S54 
<br/><br/><label>Dewey Class. No.: </label>621.381/71