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Circuit World
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BookPublisher: Emerald ISSN: 0305-6120.Subject(s): | | | Online resources: Click here to access online Summary: This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar
transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems
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This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar
transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems
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