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Circuit World

Material type: materialTypeLabelBookPublisher: Emerald ISSN: 0305-6120.Subject(s): | | | Online resources: Click here to access online Summary: This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems
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https://www.emerald.com/insight/publication/issn/0305-6120/vol/46/iss/1 (Browse shelf) https://www.emerald.com/insight/publication/issn/0305-6120/vol/46/iss/1 Available

This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar
transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems

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