Supplement 2 parts A and B.

Includes bibliographies and indexes.

pt. A. Physics of the MOS transistor / John R. Brews. Nonvolatile memories / Yoshio Nishi and Hisakazu Iizuka. The properties of silicon-on-sapphire substrates, devices, and integrated circuits / Alfred C. Ipri -- pt. B. Physics and chemistry of impurity diffusion and oxidation of silicon / Richard B. Fair. Silicon power field controlled devices and integrated circuits / B. Jayant Baliga -- pt. C. Transient thermal processing of silicon / G.K. Celler and T.E. Seidel. Reactive ion-beam etching and plasma deposition techniques using electron cyclotron resonance plasmas / Seitaro Matsua. Physics of VLSI processing and process simulation / W. Fichtner.