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Silicon integrated circuits / edited by Dawon Kahng.

Contributor(s): Kahng, Dawon.
Material type: materialTypeLabelBookSeries: 0a18.1..1.28 p18.1..30.11. Publisher: New York : Academic Press, 1981-1985ISBN: 0120029545 (v. 1).Subject(s): Metal oxide semiconductors | Semiconductor storage devices | Integrated circuitsDDC classification: 621.381/71
Contents:
pt. A. Physics of the MOS transistor / John R. Brews. Nonvolatile memories / Yoshio Nishi and Hisakazu Iizuka. The properties of silicon-on-sapphire substrates, devices, and integrated circuits / Alfred C. Ipri -- pt. B. Physics and chemistry of impurity diffusion and oxidation of silicon / Richard B. Fair. Silicon power field controlled devices and integrated circuits / B. Jayant Baliga -- pt. C. Transient thermal processing of silicon / G.K. Celler and T.E. Seidel. Reactive ion-beam etching and plasma deposition techniques using electron cyclotron resonance plasmas / Seitaro Matsua. Physics of VLSI processing and process simulation / W. Fichtner.
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Supplement 2 parts A and B.

Includes bibliographies and indexes.

pt. A. Physics of the MOS transistor / John R. Brews. Nonvolatile memories / Yoshio Nishi and Hisakazu Iizuka. The properties of silicon-on-sapphire substrates, devices, and integrated circuits / Alfred C. Ipri -- pt. B. Physics and chemistry of impurity diffusion and oxidation of silicon / Richard B. Fair. Silicon power field controlled devices and integrated circuits / B. Jayant Baliga -- pt. C. Transient thermal processing of silicon / G.K. Celler and T.E. Seidel. Reactive ion-beam etching and plasma deposition techniques using electron cyclotron resonance plasmas / Seitaro Matsua. Physics of VLSI processing and process simulation / W. Fichtner.

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